Ultra-low stress SiO2 coatings by ion beam sputtering deposition
نویسندگان
چکیده
منابع مشابه
Laser damage resistance of silica thin films deposited by Electron Beam Deposition, Ion Assisted Deposition, Reactive Low Voltage Ion Plating and Dual Ion Beam Sputtering
The laser damage resistance of optical coatings is a key point for a large number of applications. The aim of this work is to test and analyze the laser damage resistance of a thin film material commonly used for high power applications (SiO2) and deposited with different techniques: Electron Beam Deposition, Ion Assisted Deposition, Low Voltage Reactive Ion Plating and Dual Ion Beam Sputtering...
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A thin film process using ECR-ion beam sputtering with ultra pure (99.999999%) copper target was investigated for improving transportation properties in the film. The electric resistivity of the thin film was 40% lower than that of using a commercial-grade purity target. And the optical qualities evaluated by the transmission and reflection spectrum measurements were also indicate slower relaxa...
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The optical, mechanical, and microstructural properties of MgF2 single layers grown by ion beam sputtering have been investigated by spectrophotometric measurements, film stress characterization, x-ray photoelectron spectroscopy ~XPS!, x-ray diffraction, and transmission electron microscopy. The deposition conditions, using fluorine reactive gas or not, have been found to greatly influence the ...
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The laser damage resistance of optical coatings is a critical point for a large number of applications. However improving this resistance is often hard to obtain because of the large number of parameters in the deposition processes than can modify the laser damage threshold and the lack of detailed and exploitable studies published on this subject. Then, the aim of this work is to test and anal...
متن کاملLow Temperature Deposition SiO2 Films by SAPCVD
A Subatmospheric Pressure Chemical Vapor Deposition (SAPCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used as precursors and they were mixed into the SAPCVD system at 590 Torr. The deposition temperatures ranged from 140 to 265 o C and the deposition time ranged from 1 to 15 min. The measured thicknesses from...
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ژورنال
عنوان ژورنال: Applied Optics
سال: 2020
ISSN: 1559-128X,2155-3165
DOI: 10.1364/ao.380844